2SK3018 ? features ? external dimensions 1) low on-resistance. 2) fast switching speed. 3) low voltage drive (2.5v) makes this device ideal for portable equipment. 4) easily designed drive circuits. 5) easy to parallel. ? applications interfacing, switching (30v, 100ma) ? structure silicon n-channel mosfet ? . gate ? . source . drain ? absolute maximum ratings (ta = 25 c) ? equivalent circuit parameter symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 100 ma drain current pulsed i dp*1 200 ma continuous i dr 100 ma reverse drain current pulsed i drp*1 200 ma total power dissipation(tc=25 c) p d*2 200 mw channel temperature tch 150 c storage temperature tstg -55~+150 c * 1pw ? 10 s,duty cycle ? *2with each pin mounted on the recommended lands ? ? units:mm ? ? sot-23 sot-323 *a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use a protection circuit when the fixed voltages are exceeded. gate drain source *gate protection diode n-channel enhancement mode mosfet 1 date:2011/05 www.htsemi.com semiconductor jinyu
? electrical characteristics (ta = 25 c ) parameter symbo min. typ. max. unit test conditions gate-source leakage i gss ---- ---- 1 a v gs =20v,v ds =0v drain-source breakdown voltage v (br)ds 30 ---- ---- v i d =10 a ,v gs =0v zero gate voltage drain current i dss ---- ---- 1 a v ds =30v ,v gs =0v gate treshold voltage v gs(th) 0.8 ---- 1.5 v v ds =3v ,i d =100 a r ds(on) ---- 5 8 $ i d =10ma , v gs = 4v static drain-source on-state resistance r ds(on) ---- 7 13 $ i d =1ma , v gs =2.5v forward transfer admittance yfs 20 ---- ---- ms v ds =3v, i d =10ma input capacitance ciss ---- 13 ---- pf output capacitance coss ---- 9 ---- pf reverse transfer capacitance crss ---- 4 pf v ds =5v v gs =0v f=1 mhz turn-on delay time t d(on) ---- 15 ns rise time t r ---- 35 ns turn-off delay time t d(off) ---- 80 ns fall time t r ---- 80 ns i d =10 ma ,v do =5v v gs = 5v r l =500 $ r gs =10 $ ? packaging specifications package taping code t106 type basic ordering unit ( pieces ) 3000 2SK3018 ? electrical characteristic curves 2SK3018 n-channel enhancement mode mosfet 2 date:2011/05 www.htsemi.com semiconductor jinyu
2SK3018 n-channel enhancement mode mosfet 3 date:2011/05 www.htsemi.com semiconductor jinyu
? switching characteristics measurement circuit 2SK3018 n-channel enhancement mode mosfet 4 date:2011/05 www.htsemi.com semiconductor jinyu
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